S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Materials Science and Engineering (재료공학부) Others_재료공학부
Synthesis and Field Effect Transistor Properties of Graphene Nanoribbons with Different Widths
- Issue Date
- 2012년도 한국고분자학회 추계 정기총회 및 연구논문발표회, 2012. 10. 11 - 10. 12, 창원컨벤션센터
- Graphene nanoribbons (GNRs) have recently attracted attention because GNRs with a width
smaller than 1 0 nm exhibit semiconducting behavior that renders them suitable active
materials for electronic devices. Several methods have been reported to produce graphene
nanoribbons based on patterning, printing or direct laser writing. However, the uncontrollable
character of these methods and/or the harsh conditions in some cases strongly restrict the
quality of the resulting graphenes and consequently limit their applications. In contrast, the
direct synthesis of GNRs in solution affords high quality GNRs with well-defined structure.
In this study, three different GNRs are synthesized from kinked polymer precursors
containing benzene, naphthalene and anthracene units, respectively, which are converted into
the corresponding polycyclic aromatic hydrocarbons by a Scholl reaction (oxidative
cyclodehydrgenation), and their field-effect transistor properties are measured and compared
with each other.