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A HIGH-THROUGHPUT PROCESS AND LOW-NOISE STRUCTURE FOR SILICON NEURAL PROBE

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Authors
Oh, Seung Jae; Song, Jong Keun; Kim, Jin Won; Kim, Sung June
Issue Date
2004-02-16
Citation
The IASTED International Conference on Biomedical Engineering (BioMed 2004), Innsbruck, Austria, February 16-18, 2004
Keywords
silicon neural probeneural prosthesispower spectra densityMEMSneural recording
Abstract
This paper focuses on the design and fabrication of
the silicon neural probe with two improvements: the
design of process for improvement in fabrication yield
and the integration of ground layer for reduction of
electromagnetic noise. First, we have found that
fabrication yield is determined by wet-etch step for bulk
micromachining on back side of wafer. In order to
improvement of yield, a design of mask is modified that
all probes are linked by micro tab located between probes
and bars on the wafer. The micro tab is used to hold
probes on wafer during wet-etch. Second, the main
advantage of the internal ground layer located below
conduction line contributes dramatic reduction of electromagnetic
noise. To evaluate improvement due to the use
of internal grounding at electrode level, we measured
power spectral density (PSD) of noise in recorded signal.
The noise PSD is reduced from -45dB to -100dB at
120Hz that one of frequencies came from external noises.
These improvements will contribute to development on
advanced neuroprosthetic devices using silicon neural
probe.
Language
English
URI
http://hdl.handle.net/10371/9406
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Others_전기·정보공학부
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