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Showing results 1 to 30 of 30

Issue DateTitle / Author(s) / CitationFileAltmetrics
2013-02
Optical Probing of the Electronic Interaction between Graphene and Hexagonal Boron Nitride
DOI
2013-09
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
DOI
2014-05
Epitaxial Growth of Molecular Crystals on van der Waals Substrates for High-Performance Organic Electronics
DOI
2015-06
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
DOI
2015-07
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
DOI
2018-09
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
DOI
2019-05
Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene
DOI
2019-07
High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
DOI
2019-07
All-2D ReS2 transistors with split gates for logic circuitry
DOI
2019-09
Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds
DOI
2020-01
Nearly room temperature ferromagnetism in a magnetic metal-rich van der Waals metal
DOI
2020-10
Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure
DOI
2020-11
Complementary Trilayer–Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Subthermionic Subthreshold Swing

Kim, Seungho; Myeong, Gyuho; Park, Jeehoon; Jin, Taehyuk; Watanabe, Kenji; Taniguchi, Takashi; Lee, Chulho; Cho, Sungjae

ACS Applied Electronic Materials, Vol.2 No.11, pp.3491-3496

DOI
2021-01
Tailoring Single- And Double-Sided Fluorination of Bilayer Graphene via Substrate Interactions
DOI
2021-02
Stacking-Specific Reversible Oxidation of Bilayer Graphene
DOI
2021-10
Modulation of optical and electrical properties in hexagonal boron nitride by defects induced via oxygen plasma treatment
DOI
2021-10
Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure
DOI
2021-12
Anomalous Dimensionality-Driven Phase Transition of MoTe2 in Van der Waals Heterostructure
DOI
2021-12
Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure
DOI
2022-02
Band Structure Engineering of WSe2 Homo-Junction Interfaces via Thickness Control

Shin, June-Chul; Kim, Yeon Ho; Watanabe, Kenji; Taniguchi, Takashi; Lee, Chul-Ho; Lee, Gwan-Hyoung

Advanced Materials Interfaces, Vol.9 No.4, p. 2101763

DOI
2022-07
Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices
DOI
2022-10
Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors
DOI
2022-10
Irreversible Conductive Filament Contacts for Passivated van der Waals Heterostructure Devices
DOI
2022-12
Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

Lee, Yunah; Chang, Yunyeong; Ryu, Huije; Kim, Jong Hun; Watanabe, Kenji; Taniguchi, Takashi; Kim, Miyoung; Lee, Gwan-Hyoung

ACS Applied Materials and Interfaces, Vol.15 No.4, pp.6092-6097

DOI
2023-01
In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2
DOI
2023-04
Laser-Induced Phase Transition and Patterning of hBN-Encapsulated Mo Te2
DOI
2023-12
Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers
DOI
2024-03
Optical grade transformation of monolayer transition metal dichalcogenides <i>via</i> encapsulation annealing
DOI
2024-03
Atom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides
DOI
Electrically Confined Electroluminescence of Neutral Excitons in WSe<sub>2</sub> Light-Emitting Transistors
DOI
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