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Issue Date	Title / Author(s) / Citation	File	Altmetrics
2016-08	A 1T-DRAM cell based on a tunnel field-effect transistor with highly-scalable pillar and surrounding gate structure Kim, Hyungjin; Park, Byung-Gook Journal of the Korean Physical Society, Vol.69 No.3, pp.323-327	DOI
2016-08	Asymmetric dual-gate-structured one-transistor dynamic random access memory cells for retention characteristics improvement Kim, Hyungjin; Lee, Jong-Ho; Park, Byung-Gook Applied Physics Express, Vol.9 No.8, pp.084201-084201	DOI