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A STUDY ON BROADBAND GAN PHEMT POWER AMPLIFIER USING NON-FOSTER MATCHING : 비 포스터 정합을 이용한 광대역 GaN pHEMT 전력증폭기에 관한 연구

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dc.contributor.advisor서광석-
dc.contributor.author이상호-
dc.date.accessioned2017-07-13T07:21:25Z-
dc.date.available2017-07-13T07:21:25Z-
dc.date.issued2017-02-
dc.identifier.other000000142145-
dc.identifier.urihttps://hdl.handle.net/10371/119285-
dc.description학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2017. 2. 서광석.-
dc.description.abstractIn this thesis, a study on broadband GaN pHEMT power amplifier (PA) using non-Foster matching is presented.
A watt-level PA with multi-octave bandwidth is required for broadband applications such as jamming system for electronic warfare (EW). To guarantee the high power operation, GaN device is suitable due to its high power density and high voltage operation. Therefore, in this thesis, the high PAs are fabricated through a GaN device. For broadband operation, a new wideband PA structure with high gain and high efficiency is proposed. The new broadband PA using non-Foster circuit (NFC) is referred to as a negative impedance matched power amplifier (NMPA).
The bandwidth limitation from high-Q interstage matching is overcome through the use of negative capacitor, which is realized with a negative impedance converter (NIC) using the cross-coupled GaN FETs. However, since the negative impedance transducer also has a frequency limit, the following design strategy has been established. For high power operation over the entire bandwidth, the natural interstage matching is optimized for the upper sub-frequency band and the lower sub-frequency band is compensated by the negative capacitance (NC) presented by NFC. For this strategy, detailed analysis is performed to understand the frequency limitation of NIC approach, which shows that high-frequency limit comes from the self-resonance and the low-frequency limit from the power handling capability.
Besides, to overcome the frequency and power limits of NFC, a cascaded stage negative impedance converter (CSNIC) structure is proposed with improved positive loop gain. In addition, the cause of the NIC loss at the high frequency is also analyzed and solved using CSNIC.
Two NMPAs with NIC and a NMPA with CSNIC are fabricated with commercial 0.25-μm GaN pHEMT process. The implemented PA with 2× combining shows the output powers of 35.7-37.5 dBm with the power added efficiencies (PAEs) of 13-21% from 6 to 18 GHz. The 4× combining PA achieves over 5 W output power from 7 to 17 GHz. The NMPA with CSNIC shows the output powers of 7.6-10.4 W with the PAEs of 16-23% from 7 to 18 GHz. At frequencies, where NFC is optimized for interstage matching, the power improvement by 1.2 dBm and PAE improvement by 5.7% have been achieved. The NFC boosts the efficiencies and power below 12 GHz to achieve broadband performance without using any lossy matching or negative feedback. This work also demonstrates that the CSNIC overcomes the frequency and power capability limit of the conventional NIC.
To our knowledge, this is the first demonstration of NIC-based broadband amplifiers with Watt-level output power. The NMPA can provide a new perspective in designing the broadband PAs.
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dc.description.tableofcontentsChapter 1. Introduction 1
1.1 Motivation 1
1.2 Outline of This Thesis 6

Chapter 2. A 6-18 GHz GaN pHEMT Power Amplifier Using Non-Foster Matching 8
2.1 Introduction 8
2.2 Interstage Matching with NFC 11
2.3 Non-Foster Circuit 15
2.4 The limitation of Non-Foster Circuit 17
2.4.1 High Frequency Limit 17
2.4.2 Low Frequency Limit 19
2.5 Measurement Results 22
2.5.1 PA with 2× Combining 22
2.5.2 Noise Performance of NIC 25
2.5.2 Comparison Table 26
2.6 Conclusion 27

Chapter 3. A Broadband NMPA with Higher Output Power and Detailed Analysis for NFC 28
3.1 Introduction 28
3.2 Two-stage GaN PA with NFC 31
3.2.1 Overall Design Procedure of NMPA 31
3.3 Detailed Analysis for NFC 33
3.3.1 Topologies of the NFC 33
3.3.2 Frequency Limitation and Equivalent circuit of the NFC 36
3.3.3 Detailed NFC Design for Broadband PAs 38
3.4 Measurement Results 44
3.4.1 Parallel Combined PA with 4× Combining 46
3.4.2 Comparison Table 49
3.5 Conclusion 51

Chapter 4. A Broadband GaN pHEMT Power Amplifier Using Cascaded Stage Negative Impedance Converter 52
4.1 Introduction 52
4.1.1 Cause of losing non-Foster operation 53
4.1.2 NFC conditions for obtaining broadband NC 54
4.2 Cascaded Stage Negative Impedance Converter 55
4.2.1 Operation Principle and Circuit Design 55
4.2.2 Loss Compensation of NFC 60
4.3 Measurement Results 71
4.3.1 NMPA with CSNIC 71
4.3.2 Frequency Limit of CSNIC 77
4.3.3 Noise performance of CSNIC 81
4.3.4 Comparison Table 82
4.5 Conclusion 84

Chapter 5. Conclusion 85

Bibliography 87
Abstract in Korean 93
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dc.formatapplication/pdf-
dc.format.extent2617695 bytes-
dc.format.mediumapplication/pdf-
dc.language.isoko-
dc.publisher서울대학교 대학원-
dc.subjectnon-Foster circuit (NFC)-
dc.subjectpower amplifier (PA)-
dc.subjectnegative impedance matched power amplifier (NMPA)-
dc.subject.ddc621-
dc.titleA STUDY ON BROADBAND GAN PHEMT POWER AMPLIFIER USING NON-FOSTER MATCHING-
dc.title.alternative비 포스터 정합을 이용한 광대역 GaN pHEMT 전력증폭기에 관한 연구-
dc.typeThesis-
dc.description.degreeDoctor-
dc.citation.pages94-
dc.contributor.affiliation공과대학 전기·컴퓨터공학부-
dc.date.awarded2017-02-
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