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Homoepitaxial growth and In-situ doping of monocrystalline 4H-SiC for power device applications
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- Authors
- Advisor
- 김형준
- Issue Date
- 2007
- Publisher
- 서울대학교 대학원
- Keywords
- 4H-SiC ; 4H-SiC ; Homoepitaxial growth ; Homoepitaxial growth ; BTMSM ; BTMSM ; Semi-insulating ; Semi-insulating ; 철 ; Fe ; 바나듐 ; Vanadium ; Porous SiC 기판 ; Porous SiC substrate ; Schottky barrier diode ; Schottky barrier diode
- Description
- 학위논문(박사)--서울대학교 대학원 :재료공학부,2007.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042908
https://hdl.handle.net/10371/13534
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