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All Solution processed N-type organic transistor using a spinning metal process
Cited 91 time in
Web of Science
Cited 98 time in Scopus
- Authors
- Issue Date
- 2005
- Publisher
- Wiley-Blackwell
- Citation
- Adv. Mater. 2005, 17, 2180
- Keywords
- Field-effect transistors ; Fullerenes ; Thin films
- Abstract
- An all-solution-processed n-type transistor of soluble fullerene derivatives, based on a photosensitive organic silver precursor route to deposit source and drain metal electrodes, is reported (see Figure). The field-effect mobility of such devices is strongly dependent on the morphology of the spin-cast semiconducting thin film. The devices fabricated in this manner show a higher electron mobility than devices fabricated by vacuum-shadow deposition.
- ISSN
- 0935-9648
- Language
- English
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