S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Electrical and Computer Engineering (전기·정보공학부) Others_전기·정보공학부
All Solution processed N-type organic transistor using a spinning metal process
- Lee, Tae-Woo; Byun, Younghun; Koo, Bon-Won; Kang, In-Nam; Lyu, Yi-Yeol; Lee, Changhee; Pu, Lyoungsun; Lee, Sang Yun
- Issue Date
- Adv. Mater. 2005, 17, 2180
- An all-solution-processed n-type transistor of soluble fullerene derivatives, based on a photosensitive organic silver precursor route to deposit source and drain metal electrodes, is reported (see Figure). The field-effect mobility of such devices is strongly dependent on the morphology of the spin-cast semiconducting thin film. The devices fabricated in this manner show a higher electron mobility than devices fabricated by vacuum-shadow deposition.
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