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All Solution processed N-type organic transistor using a spinning metal process

Cited 91 time in Web of Science Cited 96 time in Scopus
Authors
Lee, Tae-Woo; Byun, Younghun; Koo, Bon-Won; Kang, In-Nam; Lyu, Yi-Yeol; Lee, Changhee; Pu, Lyoungsun; Lee, Sang Yun
Issue Date
2005
Publisher
Wiley-Blackwell
Citation
Adv. Mater. 2005, 17, 2180
Keywords
Field-effect transistorsFullerenesThin films
Abstract
An all-solution-processed n-type transistor of soluble fullerene derivatives, based on a photosensitive organic silver precursor route to deposit source and drain metal electrodes, is reported (see Figure). The field-effect mobility of such devices is strongly dependent on the morphology of the spin-cast semiconducting thin film. The devices fabricated in this manner show a higher electron mobility than devices fabricated by vacuum-shadow deposition.
ISSN
0935-9648
Language
English
URI
http://hdl.handle.net/10371/13835
DOI
https://doi.org/10.1002/adma.200401672
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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