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Two-step epitaxial Ge growth on Si(100) using UHV-CVD
초고진공 화학기상증착법을 이용한 실리콘 (100) 기판 위의 이단계 게르마늄 에피성장

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Authors
신건욱
Advisor
윤의준
Issue Date
2009
Publisher
서울대학교 대학원
Keywords
게르마늄Ge이단계 성장법UHV-CVD초고진공 화학기상증착법two-step growth저온low temperature
Description
Thesis(masters) --서울대학교 대학원 :재료공학부, 2009.2.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000036876

http://hdl.handle.net/10371/14902
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Master's Degree_재료공학부)
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