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A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
Cited 2 time in
Web of Science
Cited 2 time in Scopus
- Authors
- Issue Date
- 2021-06-08
- Publisher
- Springer Open
- Citation
- Nanoscale Research Letters. 2021 Jun 08;16(1):102
- Abstract
- A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.
- ISSN
- 1556-276X
- Language
- English
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