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Three-Dimensional Integration of Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical Hybrid Reconfigurable Circuits
Cited 33 time in
Web of Science
Cited 30 time in Scopus
- Authors
- Issue Date
- 2015-09
- Citation
- IEEE Electron Device Letters, Vol.36 No.9, pp.887-889
- Abstract
- Complementary-metal-oxide-semiconductor (CMOS) and nanoelectromechanical (NEM) hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) integration process. In addition, their operation is confirmed experimentally. For the fabrication of the 3D CMOS-NEM hybrid reconfigurable circuits, only the standard CMOS baseline process has been used except for the hydrofluoric acid vapor etch to release the NEM structures and focused-ion-beam patterning to define small patterns.
- ISSN
- 0741-3106
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