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Work-Function Variation Effects of Tunneling Field-Effect Transistors (TFETs)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Kyoung Min | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:46Z | - |
dc.date.available | 2022-10-26T07:21:46Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.citation | IEEE Electron Device Letters, Vol.34 No.8, pp.942-944 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186808 | - |
dc.description.abstract | The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MOSFETs) in terms of subthreshold swing (S) and threshold voltage (V-th). TFETs show similar to 1.4x larger V-th standard deviation (sigma V-th) and similar to 4.6x larger S standard deviation (sigma S) than MOSFETs at high drain voltage (V-D). It is because TFET characteristics are mainly determined by WF values of metal grains near to the source region where band-to-band tunneling occurs. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Work-Function Variation Effects of Tunneling Field-Effect Transistors (TFETs) | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2013.2264824 | - |
dc.citation.journaltitle | IEEE Electron Device Letters | - |
dc.identifier.wosid | 000323911800003 | - |
dc.identifier.scopusid | 2-s2.0-84881027856 | - |
dc.citation.endpage | 944 | - |
dc.citation.number | 8 | - |
dc.citation.startpage | 942 | - |
dc.citation.volume | 34 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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