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Work-Function Variation Effects of Tunneling Field-Effect Transistors (TFETs)
Cited 53 time in
Web of Science
Cited 57 time in Scopus
- Authors
- Issue Date
- 2013-08
- Citation
- IEEE Electron Device Letters, Vol.34 No.8, pp.942-944
- Abstract
- The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MOSFETs) in terms of subthreshold swing (S) and threshold voltage (V-th). TFETs show similar to 1.4x larger V-th standard deviation (sigma V-th) and similar to 4.6x larger S standard deviation (sigma S) than MOSFETs at high drain voltage (V-D). It is because TFET characteristics are mainly determined by WF values of metal grains near to the source region where band-to-band tunneling occurs.
- ISSN
- 0741-3106
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