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Executing Real-Time Programs on negative-AND Flash Memory Considering Read Disturb Errors

Cited 2 time in Web of Science Cited 2 time in Scopus
Authors

Shangina, Victoria; We, Kyoung-Soo; Lee, Changgun

Issue Date
2017-12
Publisher
2017 3rd IEEE International Conference on Computer and Communications (ICCC)
Citation
2017 3rd IEEE International Conference on Computer and Communications (ICCC), pp.2598-2602
Abstract
NAND flash memory is widely used in embedded systems domain due to its non-volatility, low-power consumption, high degree of integration, and shock resistance. However, NAND flash memory only supports page-base read/write operations, to execute program codes from NAND flash memory, RAM whose per-byte price is much higher than that of NAND flash memory is essential. For the cost efficiency, there are researches for minimizing required RAM size to execute real-time tasks. However, since they do not consider read disturb errors, they have a limitation in terms of reliability. Therefore, in this paper, we propose an approach to execute hard real-time tasks on NAND flash memory with minimal RAM size while considering read disturb errors. The suggested approach requires 40% less RAM pages than Shadowing approach, and 36% more RAM pages than HRT-PLRU approach.
URI
https://hdl.handle.net/10371/192883
DOI
https://doi.org/10.1109/CompComm.2017.8323005
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