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Photoluminescent Properties of ZnO Thin Films Grown on SiO2(100)/Si by Metal-Organic Chemical Vapor Deposition

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Authors
Park, Won Il; Yi, Gyu-Chul
Issue Date
2001
Publisher
Springer Verlag; The Minerals, Metals & Materials Society (TMS); Institute of Electrical and Electronics Engineers (IEEE)
Citation
Journal of Electronic Materials, 30, L32(2001)
Keywords
ZnO; metal organic chemical vapor deposition (MOCVD); photoluminescence; SiO2/Si substrate; stimulated emission
Abstract
We report on the photoluminescent (PL) properties of ZnO thin films grown on SiO2/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as low as 400 degreesC. From the PL spectra of the films at 10-300 K, strong PL peaks due to fi-ee and bound excitons were observed. The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the ZnO films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1 MW/cm(2), a strong, sharp peak was observed at 3.181 eV.
ISSN
0361-5235
Language
English
URI
http://hdl.handle.net/10371/4842
DOI
https://doi.org/10.1007/s11664-001-0127-7
https://doi.org/10.1007/s11664-001-0127-7
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Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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