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Laser-MBE growth of high-quality ZnO thin films on Al2O3(00.1) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser

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Authors
An, S.-J.; Park, Won Il; Yi, Gyu-Chul; Cho, S.
Issue Date
2002-04
Publisher
Springer Verlag
Citation
Appl. Phys. A 74, 509-512 (2002)
Keywords
MOLECULAR-BEAM EPITAXY; DEPOSITION; SAPPHIRE; HETEROEPITAXY; TEMPERATURE; SPECTRA
Abstract
High-quality ZnO thin films were grown on single-crystalline Al2O3(0001) and amorphous SiO2/Si(100) substrates at 400-640degreesC using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al2O3(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04degrees and the films on SiO2/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence (PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown on Al2O3 (0001) and SiO2/Si(100) were 3 and 18 meV, respectively.
ISSN
0947-8396 (print)1432-0630 (online)
Language
English
URI
http://hdl.handle.net/10371/4858
DOI
https://doi.org/10.1007/s003390101035
https://doi.org/10.1007/s003390101035
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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