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Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors

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Authors
Park, Won Il; Kim, Jin Suk; Yi, Gyu-Chul; Bae, M. H.; Lee, H.-J.
Issue Date
2004-11-22
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 85, 5052 (2004)
Keywords
GROWTH; ARRAYS; DC
Abstract
We report on fabrication and electrical characteristics of high-mobility field-effect transistors (FETs) using ZnO nanorods. For FET fabrications, single-crystal ZnO nanorods were prepared using catalyst-free metalorganic vapor phase epitaxy. Although typical ZnO nanorod FETs exhibited good electrical characteristics, with a transconductance of similar to140 nS and a mobility of 75 cm(2)/V s, the device characteristics were significantly improved by coating a polyimide thin layer on the nanorod surface, exhibiting a large turn-ON/OFF ratio of 10(4)-10(5), a high transconductance of 1.9 muS, and high electron mobility above 1000 cm(2)/V s. The role of the polymer coating in the enhancement of the devices is also discussed. (C) 2004 American Institute of Physics.
ISSN
0003-6951 (print)1077-3118 (online)
Language
English
URI
http://hdl.handle.net/10371/4890
http://link.aip.org/link/?APPLAB/85/5052/1
DOI
https://doi.org/10.1063/1.1821648
https://doi.org/10.1063/1.1821648
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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