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Low-resistance Ti/Al ohmic contact on undoped ZnO

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Authors
Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu; Jeon, Chang Min; Park, Won Il; Yi, Gyu-Chul; Lee, Jong-Lam
Issue Date
2002-05
Publisher
Springer Verlag; The Minerals, Metals & Materials Society (TMS); Institute of Electrical and Electronics Engineers (IEEE)
Citation
Journal of Electronic Materials, 31, 868(2002)
Keywords
ZnO; ohmic contact; photoemission spectroscopy
Abstract
We report a low-resistance ohmic contact on undoped ZnO using a promising contact scheme of Ti/Al. Specific-contact resistivity, as low as 9.0 x 10(-7) Omegacm(2), was obtained from the Ti(300 Angstrom)/Al(3,000 Angstrom) contact annealed at 300degreesC. It was found that TiO was produced, and the atomic ratio of Zn/O was dramatically increased after annealing at 300degreesC. This provides the evidence that a number of oxygen vacancies, acting as donors for electrons, were produced below the contact. This leads to the increase of electron concentration via the reduction of contact resistivity.
ISSN
0361-5235
Language
English
URI
http://hdl.handle.net/10371/4906
DOI
https://doi.org/10.1007/s11664-002-0197-1
https://doi.org/10.1007/s11664-002-0197-1
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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