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Compensation Model for n-type GaN

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Authors
Yi, Gyu-Chul; Park, Won Il
Issue Date
2001-11-11
Publisher
Japan Society of Applied Physics
Citation
Jpn. J. Appl. Phys. 40 (2001) 6243
Keywords
Se-doped GaN; defect; compensation model; Hall effect; photoluminescence
Abstract
The defect structure for unintentionally doped and deliberately Se-doped, n-type GaN was investigated, For impurity doping, Se was incorporated into GaN films during vapor phase epitaxial growth. Both nominally undoped and Se-doped. n-type GaN films were highly compensated as determined by the Hall effect measurements and photoluminescence spectroscopy. It was also found that the compensation by acceptors increases with increasing Se doping concentration. Based upon these experiments and the theoretical calculations, a defect compensation model for n-type GaN was developed.
ISSN
0021-4922 (print)1347-4065 (online)
Language
English
URI
http://link.aip.org/link/?APPLAB/69/3028/1
http://hdl.handle.net/10371/5357
DOI
https://doi.org/10.1063/1.116828
https://doi.org/10.1063/1.116828
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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