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Dry etching of ZnO films and plasma-induced damage to optical properties
Cited 53 time in
Web of Science
Cited 57 time in Scopus
- Authors
- Issue Date
- 2003-03-14
- Publisher
- American Vacuum Society
- Citation
- J. Vac. Sci. Technol. B 21, 800 (2003)
- Abstract
- To study the effects of plasma chemistries on etch characteristics. and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl-2 /Ar, Cl-2 /H-2 /Ar, and CH4 /H-2 /Ar. The CH4 /H-2 /Ar chemistry showed a faster etch rate and a better surface morphology than the Cl-2-based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH4 /H-2 /Ar chemistry showed the least degradation of the optical properties.
- ISSN
- 1071-1023
- Language
- English
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