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Dependence of carbon incorporation rate on crystallographic orientation of GaAs grown by MOCVD using CCI4 : MOCVV장치로 기른 GaAs를 CCI4로 도핑시켰을 때의 탄소도핑효율의 기판결정방향에 대한 의존성
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- Authors
- Advisor
- 최병두
- Issue Date
- 1996
- Publisher
- 서울대학교 대학원
- Description
- Thesis (master`s)--서울대학교 대학원 :물리학과,1996.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000081931
https://hdl.handle.net/10371/56163
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