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Dependence of carbon incorporation rate on crystallographic orientation of GaAs grown by MOCVD using CCI4
MOCVV장치로 기른 GaAs를 CCI4로 도핑시켰을 때의 탄소도핑효율의 기판결정방향에 대한 의존성

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Authors
이병양
Advisor
최병두
Issue Date
1996
Publisher
서울대학교 대학원
Description
Thesis (master`s)--서울대학교 대학원 :물리학과,1996.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000081931

http://hdl.handle.net/10371/56163
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Theses (Master's Degree_물리학전공)
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