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Self-annealing effect of electrolessly deposited copper thin films based on Co(II)-ethylenediamine as a reducing agent
Cited 3 time in
Web of Science
Cited 3 time in Scopus
- Authors
- Issue Date
- 2004-01-20
- Publisher
- American Vacuum Society
- Citation
- Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures 22(1), 180-184
- Keywords
- copper ; metallic thin films ; crystal microstructure ; grain growth ; dislocations ; electrical resistivity
- Abstract
- A study on the self-annealing of electrolessly deposited copper films on blanket TiN wafers was
carried out for different thicknesses. Decrease of 60%–90% in the sheet resistances of 100–260 nm
thick copper films was observed after self-annealing. Changes in the copper films microstructure
were also investigated, including the enhancement of their ~111! orientation and grain growth. The
pinning of chlorine was found to be influential for self-annealing and Pd activation for electroless
deposition played an important role in self-annealing as to microstructural dislocations and defects.
In addition, the thinner copper film was more affected by self-annealing. After deposition at room
temperature, elevated temperatures accelerated self-annealing and caused decreases in resistivities.
The resistivity of a 260 nm thick copper was reduced to 1.7 mVcm at 70 °C.
- ISSN
- 1071-1023
- Language
- English
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