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Improvement of electrolessly gap-filled Cu using 2,2'-dipyridyl and bis-(3-sulfopropyl)-disulfide (SPS)

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Authors
Lee, Chang Hwa; Lee, Sang Chul; Kim, Jae Jeong
Issue Date
2005-06-07
Publisher
Electrochemical Society
Citation
Electrochemical and Solid-State Letters, 8 (8), C110-C113
Keywords
depositionelectrical resistivityelectroless depositionelectrical resistivitymetallic thin filmsvoids (solid)surface roughnessannealingintegrated circuitinterconnections
Abstract
The use of bis~3-sulfopropyl! disulfide ~SPS! in Cu electroless deposition resulted in Cu bottom-up filling. However, the high
accelerating effect of SPS led to a poor electrical property of the film and generated many voids in the film by increasing the
surface roughness and causing unstable deposition behavior. The addition of 2,28-dipyridyl together with SPS substantially
improved the film quality of the gap-filled Cu maintaining the bottom-up filling behavior. It lowered the film resistivity by
approximately 23% and enhanced the crystallinity. No voids were detected in the as-deposited Cu even after annealing.
ISSN
1099-0062
Language
English
URI
http://hdl.handle.net/10371/66124
DOI
https://doi.org/10.1149/1.1943551
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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