SHERP

High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide

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Authors
Seabury, C. W.; Bylsma, R. B.; Vella-Coleiro, G. P.; Kim, Sung June; Davisson, P. S.; Yee, C. M. L.; Eng, James; Deblis, D.; Jeong, Jichai; Jhee, Y. K.
Issue Date
1991-02
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
IEEE Photon. Technol. Lett., vol. 3, pp. 164-166, Feb. 1991
Abstract
Operation of an optoelectronic integrated circuit which
includes two p-i-ns, preamplifiers, 2 x 2 crosspoint .switch, and output
buffers has been demonstrated. These circuits have been fabricated in
semi-insulating 1nP:Fe substrates by vapor phase epitaxy and ion implantation
using a planar horizontally integrated technology. Signals
modulated at 150 MHz are shown to be switched at 15 MHz, with the
circuits capable of detecting and passing data modulated at - 1 GHz.
ISSN
1041-1135
Language
English
URI
http://hdl.handle.net/10371/8874
DOI
https://doi.org/10.1109/68.76877
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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