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Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sung June | - |
| dc.contributor.author | Guth, G. | - |
| dc.contributor.author | Vella-Coleiro, G. | - |
| dc.contributor.author | Seabury, C. | - |
| dc.contributor.author | Sponsler, W. | - |
| dc.contributor.author | Rhoades, B. | - |
| dc.date.accessioned | 2009-09-08 | - |
| dc.date.available | 2009-09-08 | - |
| dc.date.issued | 1988-09 | - |
| dc.identifier.citation | IEEE Electron Device Lett., vol. 9, pp. 447-449, Sept. 1988 | en |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/8878 | - |
| dc.description.abstract | monolithically integrated p-i-n FET amplifier has been
fabricated using ion-implanted indium phosphide (InP) JFETs. The vertically integrated material structure consists of a vapor phase epitaxy (VPE) grown InCaAs photoabsorption layer and a metal organic chemical vapor deposition (MOCVD) grown Fe-doped semi-insulating layer. A Zn diffusion was performed to complete the p-i-n photodiode. High-performance fully implanted InP JFETs were used to form the integrated amplifier with a symmetrical design to remove the dc offset. With a receiver sensitivity of ~ 36.4 dBm measured at 200-Mbit/s NRZ for IO RER, it is easily the most sensitive monolithic p-i-n FET preamp yet reported in this frequency range. The p-i-n amplifier has a dynamic range of 15 dH. | en |
| dc.description.sponsorship | The authors would like to acknowledge the help from Y.
Ota, J. M. Geary, R. E. Frahm, and K. J. OBrien in device packaging and in dielectric deposition. | en |
| dc.language.iso | en | - |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en |
| dc.title | Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 김성준 | - |
| dc.identifier.doi | 10.1109/55.6941 | - |
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