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Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier

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dc.contributor.authorKim, Sung June-
dc.contributor.authorGuth, G.-
dc.contributor.authorVella-Coleiro, G.-
dc.contributor.authorSeabury, C.-
dc.contributor.authorSponsler, W.-
dc.contributor.authorRhoades, B.-
dc.date.accessioned2009-09-08-
dc.date.available2009-09-08-
dc.date.issued1988-09-
dc.identifier.citationIEEE Electron Device Lett., vol. 9, pp. 447-449, Sept. 1988en
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10371/8878-
dc.description.abstractmonolithically integrated p-i-n FET amplifier has been
fabricated using ion-implanted indium phosphide (InP) JFET’s. The
vertically integrated material structure consists of a vapor phase epitaxy
(VPE) grown InCaAs photoabsorption layer and a metal organic
chemical vapor deposition (MOCVD) grown Fe-doped semi-insulating
layer. A Zn diffusion was performed to complete the p-i-n photodiode.
High-performance fully implanted InP JFET’s were used to form the
integrated amplifier with a symmetrical design to remove the dc offset.
With a receiver sensitivity of ~ 36.4 dBm measured at 200-Mbit/s NRZ
for IO RER, it is easily the most sensitive monolithic p-i-n FET preamp
yet reported in this frequency range. The p-i-n amplifier has a dynamic
range of 15 dH.
en
dc.description.sponsorshipThe authors would like to acknowledge the help from Y.
Ota, J. M. Geary, R. E. Frahm, and K. J. O’Brien in device
packaging and in dielectric deposition.
en
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleMonolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifieren
dc.typeArticleen
dc.contributor.AlternativeAuthor김성준-
dc.identifier.doi10.1109/55.6941-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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