SHERP

CMOS compatibility of a micromachining process developed for semiconductor neural probe

Cited 0 time in webofscience Cited 1 time in scopus
Authors
An, S.K.; Oh, S.J.; Kim, Sung June
Issue Date
2001-10-25
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Proceedings of the 23rd Annual International Conference of the IEEE Engeering in Medicine and Biology Society, vol. 4, pp. 3443-3445, Istanbul, Turkey, October 25-28, 2001
Keywords
Neural probesCMOS compatibility
Abstract
Neural probes are made on silicon substrate using a micromachining process with low temperature steps only. A deep silicon etch ("Bosch") process was used for the probe shaping. CMOS compatibility of the process was checked and reported in this paper. Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step, while changes of test transistor characteristics were monitored. Threshold voltage was found virtually unchanged for both nand p-type MOS transistors. When excess plasma exposure was done, however, non-trivial shift in p-MOS threshold was observed.
ISSN
1094-687X
Language
English
URI
http://hdl.handle.net/10371/8904
Files in This Item:
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Others_전기·정보공학부
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse