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Issue Date	Title / Author(s) / Citation	File
2016-04	Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation Huh, In; Cheon, Woo Young; Choi, Woo Young Applied Physics Letters, Vol.108 No.15, p. 153506	DOI
2016-10	Influence of the Source Doping Concentration on the Subthreshold Swing (S) of Tunneling Field-Effect Transistors (TFETs) Huh, In; Choi, Woo Young Journal of Nanoscience and Nanotechnology, Vol.16 No.10, pp.10241-10246	DOI
2017-08	An Accurate Drain Current Model of Monolayer Transition-Metal Dichalcogenide Tunnel FETs Huh, In; Park, Sangchun; Shin, Mincheol; Choi, Woo Young IEEE Transactions on Electron Devices, Vol.64 No.8, pp.3502-3507	DOI