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Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation
Cited 8 time in
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Cited 8 time in Scopus
- Authors
- Issue Date
- 2016-04
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, Vol.108 No.15, p. 153506
- Abstract
- A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state ("1" state) and large SS in the program state ("0" state). Thus, SAT RAM cells can achieve low read voltage (V-read) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (W-tun) of the source-to-channel tunneling junction. Published by AIP Publishing.
- ISSN
- 0003-6951
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