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Showing results 1 to 7 of 7

Issue DateTitle / Author(s) / CitationFileAltmetrics
2018-12
Real- time Etch Control to Reduce First Wafer Effect in SF6/O-2/Ar Plasma

Ryu, Sangwon; Jang, Yunchang; Kwon, Ji-Won; Park, Damdae; Lee, JongMin; Kim, Gon-Ho

2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM), p. 8651157

DOI
2019-04
Design of a self-tuning adaptive model predictive controller using recursive model parameter estimation for real-time plasma variable control

Koo, Junmo; Park, Damdae; Ryu, Sangwon; Kim, Gon-Ho; Lee, Youn-Woo

Computers and Chemical Engineering, Vol.123, pp.126-142

DOI
2021-06
Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O-2/Ar Capacitively Coupled Plasma
DOI
2022-02
Phenomenology-based model predictive control of electron density in Ar/SF6 capacitively coupled etch plasma

Ryu, Sangwon; Kwon, Ji-Won; Lee, Ingyu; Park, Jihoon; Kim, Gon-Ho

Journal of the Korean Physical Society, Vol.80 No.3, pp.233-240

DOI
2022-04
Development of model predictive control of fluorine density in SF6/O2/Ar etch plasma by oxygen flow rate

Ryu, Sangwon; Kwon, Ji-Won; Park, Jihoon; Lee, Ingyu; Park, Seolhye; Kim, Gon-Ho

Current Applied Physics, Vol.36, pp.183-186

DOI
2022-04
Plasma information-based virtual metrology (PI-VM) and mass production process control
DOI
2023-01
Investigation of ion-induced etch damages on trench surface of Ge2Sb2Te5 in high density Ar/SF6 plasma

Song, Jaemin; Lee, Myeonggeon; Ryu, Sangwon; Jang, Yunchang; Park, Seolhye; Kim, Gon-Ho

Current Applied Physics, Vol.45, pp.105-113

DOI
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