Browse

Effect of Substrate Bias on Deposition Behavior of Charged Silicon Nanoparticles in ICP-CVD Process
유도결합플라즈마를 이용한 화학기상증착 공정 중에 생성되는 하전된 실리콘 나노 입자의 증착 거동에 대한 기판 바이어스 효과

Cited 0 time in Web of Science Cited 0 time in Scopus
Authors
유승완
Advisor
황농문
Major
공과대학 재료공학부
Issue Date
2016-08
Publisher
서울대학교 대학원
Keywords
silicon thin filmcharged nanoparticlesnonclassical crystallizationICP-CVDsubstrate bias
Description
학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2016. 8. 황농문.
Abstract
The effect of a substrate bias on the deposition behavior of crystalline silicon nanoparticles during inductively coupled plasma chemical vapor deposition (ICP-CVD) was approached by nonclassical crystallization, in which the building block is a nanoparticle rather than an individual atom or molecule. This study consists of two major parts. One is the effect of the substrate bias on the deposition behavior of crystalline silicon nanoparticles during the thin-film deposition condition in the ICP-CVD process. The other is the effect of the substrate bias on the deposition behavior of crystalline silicon nanoparticles during the nanoparticle synthesis condition in the ICP-CVD process
In the first part, the coexistence of positively and negatively charged nanoparticles in the plasma and their role in Si film deposition are confirmed by applying a bias voltage on the substrate, which is so small as not to vary the plasma potential. The sizes of positively and negatively charged nanoparticles captured on the TEM grid membrane were respectively 2.7 ~ 5.5 nm and 6 ~ 13 nm. The film deposited by positively charged nanoparticles has a typical columnar structure. In contrast, the film deposited by negatively charged nanoparticles has the structure like a powder compact with the deposition rate about three times higher than that deposited by positively charged nanoparticles. All the films have crystallinity although the substrate is at room temperature, which is attributed to the deposition of crystalline nanoparticles formed in the plasma. The film deposited by negatively charged nanoparticles has the highest crystalline fraction of 0.84.
In the second part, the effect of the substrate bias on the size and amount of crystalline silicon nanoparticles deposited on the substrate with inserting grounded grids are investigated in an inductively coupled plasma chemical vapor deposition (ICP-CVD) process. By inserting grounded grids above the substrate, the lower region of the grounded grids was separated from the plasma. Thereby, the film formation in the ICP-CVD process could be avoided on the substrate and as a result crystalline Si nanoparticles formed in the plasma could be deposited on the substrate. Moreover the size and the amount of nanoparticles could be controlled by applying the direct current (DC) bias on the substrate. When the 1 mm square mesh grid was used, the nanoparticle flux was increased as the negative substrate bias was increased from 0 V to - 50 V. On the other hand, when positive biases were applied to the substrate, Si nanoparticles were not deposited at all. When the 2 mm square mesh grid was used, sizes of nanoparticles were increased as the substrate bias was increased from -50 V to 50 V.
Language
English
URI
https://hdl.handle.net/10371/118098
Files in This Item:
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Ph.D. / Sc.D._재료공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse