GIDL characteristics on Si1-xGex pFinFET for Low Power Transistors

Abstract

This dissertation presents an investigation of Gate-Induced-Drain-Leakage (GIDL) current in SiliconGermanium (SiGe) p-type FinFET for low power transistors and proposes the guidelines to reduce GIDL current. First, the main mechanism of GIDL current in FinFET was thoroughly investigated because conventional GIDL current is unexpected event in FinFET. Therefore, GIDL current in FinFET is analyzed by comparing that in MOSFET which has the same device specification as the FinFET. Second, the effects of Ge fraction and its distribution in internal fin on GIDL current were analyzed considering actually manufactured fin in SiGe FinFET. Third, the analysis of GIDL current by the device specifications and doping profile in drain region was presented. As a result, guidelines are presented considering the results above. The main mechanism and the characteristics of GIDL current in FinFET which are investigated in this dissertation would be and index to improve the characteristics of manufactured SiGe FinFET.