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Development of oxide thin-film diodes and characterization of oxide thin-film transistors
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- Authors
- Advisor
- 김연상
- Major
- 융합과학기술대학원 나노융합학과
- Issue Date
- 2015-08
- Publisher
- 서울대학교 융합과학기술대학원
- Keywords
- thin-film electronics ; oxide electronics ; oxide thin-film transistors ; oxide thin-film diodes
- Description
- 학위논문 (박사)-- 서울대학교 융합과학기술대학원 : 융합과학부 나노융합전공, 2015. 8. 김연상.
- Abstract
- In this paper, development of oxide thin-film diodes and characterization of oxide thin-film transistors are investigated. Our study has meaning in that 1) oxide materials are promising compounds showing novel electronic performances, overcoming conventional amorphous silicon technologies in active matrix in thin-film electronics
2) these two units act as key roles for operating functions in functional active matrix in thin-film electronic systems
the thin-film transistor is for a switching unit in a matrix element, and the thin-film diode is for signal-rectifications (AC-to-DC converting and electrostatic discharging) to protect the active matrix. In oxide thin-film transistors, how oxide insulator as a gate dielectric layer affects the electrical properties of oxide semiconductor as a channel layer is discussed. For thin-film diodes, from recent observation showing electrical conductions at oxide insulator/oxide semiconductor interfaces, it is shown that the novel finding act as a key role to perform the function of rectifying electrical currents, thereby it is utilized as oxide thin-film diodes. These two important device units will be applied to realize novel thin-film electronic systems.
- Language
- English
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