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Development of oxide thin-film diodes and characterization of oxide thin-film transistors

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Authors
이응규
Advisor
김연상
Major
융합과학기술대학원 나노융합학과
Issue Date
2015-08
Publisher
서울대학교 융합과학기술대학원
Keywords
thin-film electronicsoxide electronicsoxide thin-film transistorsoxide thin-film diodes
Description
학위논문 (박사)-- 서울대학교 융합과학기술대학원 : 융합과학부 나노융합전공, 2015. 8. 김연상.
Abstract
In this paper, development of oxide thin-film diodes and characterization of oxide thin-film transistors are investigated. Our study has meaning in that 1) oxide materials are promising compounds showing novel electronic performances, overcoming conventional amorphous silicon technologies in active matrix in thin-film electronics
2) these two units act as key roles for operating functions in functional active matrix in thin-film electronic systems
the thin-film transistor is for a switching unit in a matrix element, and the thin-film diode is for signal-rectifications (AC-to-DC converting and electrostatic discharging) to protect the active matrix. In oxide thin-film transistors, how oxide insulator as a gate dielectric layer affects the electrical properties of oxide semiconductor as a channel layer is discussed. For thin-film diodes, from recent observation showing electrical conductions at oxide insulator/oxide semiconductor interfaces, it is shown that the novel finding act as a key role to perform the function of rectifying electrical currents, thereby it is utilized as oxide thin-film diodes. These two important device units will be applied to realize novel thin-film electronic systems.
Language
English
URI
https://hdl.handle.net/10371/122388
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Graduate School of Convergence Science and Technology (융합과학기술대학원)Dept. of Transdisciplinary Studies(융합과학부)Theses (Ph.D. / Sc.D._융합과학부)
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