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Deposition behavior and dielectric properties of the Ti-based oxide films for memory devices : 메모리 소자에의 적용을 위한 TiO₂박막의 성장 거동 및 특성에 대한 연구
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- Authors
- Advisor
- 황철성
- Issue Date
- 2007
- Publisher
- 서울대학교 대학원
- Keywords
- TiO2 ; Al-doped TiO2 ; high-k ; Atomic layer deposition (ALD) ; O3 ; DRAM ; capacitor
- Description
- 학위논문(박사) --서울대학교 대학원 :재료공학부,2007.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042915
https://hdl.handle.net/10371/12645
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