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Growth of In-rich InGaNGaN quantum well structures using growth interruption and analysis on structural and optical properties : 성장정지를 이용한 In-rich InGaNGaN 양자우물 구조의 성장 및 구조적 광학적 특성 분석
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- 유기금속화학기상증착법 (MOCVD) ; metal-organic chemical vapor deposition (MOCVD) ; 초박막 (ultra-thin) In-rich InGaN ; ultra-thin In-rich InGaN ; 양자우물 (QW) ; quantum well (QW) ; 성장 정지 (GI) ; growth interruption (GI) ; 내부 형성 전기장 (built-in electric field) ; built-in electric field ; 캐리어 가둠 (carrier localization) ; localization centers ; 이차원 성장법 (two-step growth method) ; two-step growth method
- Description
- Thesis(doctoral)--서울대학교 대학원 :재료공학부,2005.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000052250
https://hdl.handle.net/10371/12699
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