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Formation of low-resistance W thin film using B2H6-reduced W nucleation layer and its application for a bit line of an advanced memory devices : 다이보렌 환원법에 의한 텅스텐 핵생성층을 이용한 저저항 텅스텐 박막의 형성과 차세대 메모리소자의 비트라인에의 응용에 관한 연구
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- Authors
- Advisor
- 김형준
- Issue Date
- 2009
- Publisher
- 서울대학교 대학원
- Keywords
- 화학기상텅스텐 ; CVD-W ; 저저항 텅스텐 ; Low Resistive CVD-W ; 원자층 증착 텅스텐 ; ALD-W ; 펄스방식의 텅스텐 ; pulsed CVD-W ; 다이보렌 ; B2H6 ; 사일렌 ; SiH4 ; 접착력 ; Adhesion ; 접합누설전류 ; Junction Leakage Current ; 포화드레인 전류 ; Saturation Drain Current ; 비트라인 ; Bit line
- Description
- Thesis(doctors) --서울대학교 대학원 :재료공학부,2009.8.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038139
https://hdl.handle.net/10371/12713
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