Publications
Detailed Information
Fabrication and characterization of planar 4H-SiC metal semiconductor field effect transistors for microwave power device applications
Cited 0 time in
Web of Science
Cited 0 time in Scopus
- Authors
- Advisor
- 김형준
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- 4H-탄화규소 ; 4H-SiC ; MESFET ; MESFET ; 이온주입 ; Ion-implantation ; 오믹접합 ; Ohmic contact ; 쇼트키접합 ; Schottky contact ; 게이트 구조 ; Gate dimension ; 전도성 기판 ; Conducting substrate ; 반절연 기판 ; Semi-insulating substrate ; 소신호등가회로 ; Small-signal equivalent circuit
- Description
- Thesis(doctoral)--서울대학교 대학원 :재료공학부,2005.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050053
https://hdl.handle.net/10371/12716
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.