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Study on interface states of Al₂O₃Si and work function tunability of gate metal stack in MOS capacitor
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- Authors
- Advisor
- 김형준
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- Metal-oxide-semiconductor (MOS) ; Deep level transient spectroscopy (DLTS) ; Fixed Charge ; Slow ; Fast Interface state ; Minority Capture Process ; Capture Cross-section ; Metal Gate ; Work Function Tunability ; Stacked Bi-metal Layers
- Description
- Thesis(doctoral)--서울대학교 대학원 :재료공학부,2005.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050063
https://hdl.handle.net/10371/12724
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