Nanoscale order, thermal conductivity of Ge2Sb2Te5 alloy and its application for PRAM device

권민호

Nanoscale order, thermal conductivity of Ge2Sb2Te5 alloy and its application for PRAM device
Ge2Sb2Te5 화합물의 나노스케일 규칙도, 열전도도 및 이를 적용한 상변화 메모리소자에 대한 연구

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Authors: 권민호

Advisor: 김기범

Issue Date: 2009

Publisher: 서울대학교 대학원

Keywords: 상변화 메모리; Phase change memory; 중거리 규칙도; PRAM; 열전도도; PCRAM; 상호확산; Ge2Sb2Te5; 확산방지막; Si; 열전효과; Ti silicide; nanoscale order; thermal conductivity; interdiffusion; diffusion barrier; Thermoelectric effect; Peltier effect; FEM; TDTR

Description: Thesis(doctors) --서울대학교 대학원 :재료공학부,2009.8.

Language: English

URI: http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038119

http://hdl.handle.net/10371/12930

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Appears in Collections:: College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)

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