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(A) novel cyclic depositionetching process to obtain bowing-free SiO2 contact holes
산화막 콘택홀의 벽면 벌어짐 현상을 개선하기 위한 새로운 식각 공정의 개발

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Authors
이진관
Advisor
문상흡
Issue Date
2009
Publisher
서울대학교 대학원
Keywords
산화막Bowing콘택홀Necking벽면 벌어짐contact holeplasma etchingC4F6
Description
Thesis(doctors) --서울대학교 대학원 :화학생물공학부,2009.8.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038234

http://hdl.handle.net/10371/12995
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Theses (Ph.D. / Sc.D._화학생물공학부)
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