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New materials in advanced gate stacks for next generation complementary metal oxide semiconductor field effect transistors(CMOSFETs) technology

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Authors
박태주
Advisor
황철성
Issue Date
2008
Publisher
서울대학교 대학원
Keywords
ALDALDHigh-kHigh-kMetal gateMetal gateHigh mobility channelHigh mobility channelMOSFETsMOSFETs
Description
Thesis(doctors)--서울대학교 대학원 :재료공학부,2008.2.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000039480

https://hdl.handle.net/10371/13567
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Ph.D. / Sc.D._재료공학부)
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