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College of Engineering/Engineering Practice School (공과대학/대학원)
Dept. of Material Science and Engineering (재료공학부)
Theses (Ph.D. / Sc.D._재료공학부)
In-situ analysis of In(Ga)As layer growth by spectral reflectance
Spectral reflectance를 이용한 In(Ga)As층 성장의 실시간 분석
- Authors
- 안응진
- Advisor
- 윤의준
- Issue Date
- 2007
- Publisher
- 서울대학교 대학원
- Keywords
- 유기금속 화학기상 증착법 (MOCVD); Metalorganic chemical vapor deposition (MOCVD); spectral reflectance (SR); spectral reflectance (SR); 실시간모니터링; in-situ monitoring; InAs; epitaxial growth; InGaAs; InAs; GaAs; InGaAs; InP; GaAs; ZnO; InP; multibeam optical stress sensor (MOSS); ZnO; 자발형성 양자점 (SAQD); surface reconstruction; InP; surface reaction; InGaAs; multibeam optical stress sensor (MOSS); GaAs; self-assembled quantum dots (SAQD); InP; photoluminescence (PL); ZnO; atomic force microscopy (AFM); 표면 reconstruction; reflectance anisotropy spectroscopy (RAS); 표면 반응; surface photoabsorption (SPA); 다중빔광학 응력측정기 (MOSS); 원자전자현미경 (AFM); reflectance anisotropy spectroscopy (RAS); surface photoabsorption (SPA)
- Description
- 학위논문(박사) --서울대학교 대학원 :재료공학부,2007.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042914
http://hdl.handle.net/10371/13584
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