Publications
Detailed Information
Charge Carrier Tunneling in the Light-Emitting Diodes of Poly(p-phenylene) Thin Film
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, J. W. | - |
dc.contributor.author | Kang, G. W. | - |
dc.contributor.author | Lee, C. H. | - |
dc.contributor.author | Song, W. J. | - |
dc.contributor.author | Seoul, C. | - |
dc.date.accessioned | 2009-11-18T23:13:39Z | - |
dc.date.available | 2009-11-18T23:13:39Z | - |
dc.date.issued | 2000-06 | - |
dc.identifier.citation | J. Korean Phys. Soc. 36, 346 | en |
dc.identifier.issn | 0374-4884 (Print) | - |
dc.identifier.issn | 1976-8524 (Online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/13597 | - |
dc.description.abstract | We have studied the temperature dependence of the current-voltage (I-V ) and the
electroluminescence-voltage (EL-V ) characteristics in the blue light-emitting diodes of vacuumdeposited poly (p-phenylene) (PPP) thin lms in the temperature range between 14 and 290 K. The onset of the EL occurs at an electric eld of about 7107 V/m, independent of the thickness of the PPP layer. The I-V and EL-V dependences show very weak temperature dependences and t very well with the Fowler-Nordheim tunneling formula. The results suggest that charge carrier injection is a tunneling process through an energy barrier of about 0.60.8 eV in indium tin oxide (ITO)/PPP/Al devices. | en |
dc.description.sponsorship | This work was supported by the Korea Science and Engineering
Foundation (KOSEF) through the Quantum- Functional Semiconductor Research Center at Dongguk University. | en |
dc.language.iso | en | en |
dc.publisher | Journal of the Korean Physical Society | en |
dc.title | Charge Carrier Tunneling in the Light-Emitting Diodes of Poly(p-phenylene) Thin Film | en |
dc.type | Article | en |
dc.identifier.doi | 10.3938/jkps.36.346 | - |
- Appears in Collections:
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.