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All-solution-processed bottom-gate organic thin-film transistor with improved subthreshold behavior using functionalized pentacene active layer

DC Field Value Language
dc.contributor.authorKim, Jinwoo-
dc.contributor.authorJeong, Jaewook-
dc.contributor.authorCho, Hyun Duk-
dc.contributor.authorLee, Changhee-
dc.contributor.authorKim, Seul Ong-
dc.contributor.authorKwon, Soon-Ki-
dc.contributor.authorHong, Yongtaek-
dc.date.accessioned2009-11-19-
dc.date.available2009-11-19-
dc.date.issued2009-06-07-
dc.identifier.citationJ. Phys. D: Appl. Phys. 42 115107en
dc.identifier.issn0022-3727-
dc.identifier.urihttps://hdl.handle.net/10371/13602-
dc.description.abstractWe report organic thin-film transistors (OTFTs) made by simple solution processes in an
ambient air environment. Inkjet-printed silver electrodes were used for bottom-gate and
bottom-contacted source/drain electrodes. A spin-coated cross-linked poly(4-vinylphenol)
(PVP) and a spin-coated 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were
used as a gate dielectric layer and an active layer, respectively. A high-boiling-point solvent
was used for TIPS-pentacene and the resulting film showed stem-like morphology. X-ray
diffraction (XRD) measurement showed the spin-coated active layer was well crystallized,
showing the (0 0 1) plane. The reasonable mobility, on/off ratio and threshold voltage of the
fabricated device, which are comparable to those of the previously reported TIPS-pentacene
OTFT with gold electrodes, show that the printed silver electrodes worked successfully as gate
and source/drain electrodes. Furthermore, the device showed a subthreshold slope of
0.61 V/dec in the linear region (VDS = −5 V), which is the lowest value for spin-coated
TIPS-pentacene TFT ever reported, and much lower than that of the thermally evaporated
pentacene OTFTs. It is thought that the surface energy of the PVP dielectric layer is well
matched with that of a well-ordered TIPS-pentacene (0 0 1) surface when a high-boiling-point
solvent and a low-temperature drying process are used, thereby making good interface
properties, and showing higher performances than those for pentacene TFT with the same
structure.
en
dc.language.isoenen
dc.publisherIOP Scienceen
dc.titleAll-solution-processed bottom-gate organic thin-film transistor with improved subthreshold behavior using functionalized pentacene active layeren
dc.typeArticleen
dc.contributor.AlternativeAuthor김진우-
dc.contributor.AlternativeAuthor정재욱-
dc.contributor.AlternativeAuthor조현덕-
dc.contributor.AlternativeAuthor이창희-
dc.contributor.AlternativeAuthor김설옹-
dc.contributor.AlternativeAuthor권순기-
dc.contributor.AlternativeAuthor홍용택-
dc.identifier.doi10.1088/0022-3727/42/11/115107-
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