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Effect of Cadmium Arachidate Layers on the Growth of Pentacene and the Performance of Pentacene-Based Thin Film Transistors

Cited 11 time in Web of Science Cited 11 time in Scopus
Authors
Nayak, Pradipta K.; Kim, Jinwoo; Cho, Junhee; Lee, Changhee; Hong, Yongtaek
Issue Date
2009-06-02
Publisher
American Chemical Society
Citation
Langmuir 2009; 25, 6565-6569
Abstract
The effect of cadmium arachidate (CdA) layers deposited by Langmuir-Blodgett technique on the growth of
pentacene thin films and the performance of pentacene-based thin film transistors has been investigated. The
hydrophobicity of the SiO2 gate dielectric surface was increased (surface energy reduced) with the deposition of CdA
layers as a result of the presence of long hydrophobic alkyl chains attached to the cadmium atoms. The change in surface
wetting properties of SiO2 strongly influenced the growth mechanism of pentacene thin films. The grain size and rootmean-
square surface roughness of pentacene was decreased with an increase in the number of CdA layers compared to
the pentacene deposited on a bare SiO2 surface. Organic thin film transistors (OTFTs) with seven layers of CdA on SiO2
showed the highest mobility of 0.27 cm2/Vs and the lowest subthreshold slope of 2.4 V/dec. The enhanced electrical
properties of the OTFTs with SiO2/CdA as the dielectric is attributed to the better intermolecular connection, tight
packing, and improved surface quality of the pentacene, as evident from the X-ray diffraction (XRD) and atomic force
microscopy (AFM) results.
ISSN
0743-7463
Language
English
URI
https://hdl.handle.net/10371/13604
DOI
https://doi.org/10.1021/la900567z
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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