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Deposition behavior and phase change characteristics of Ge2Sb2Te5 thin films for phase change memory application : 상변화메모리 적용을 위한 Ge2Sb2Te5 박막의 증착 거동과 상변화 특성
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 황철성 | - |
| dc.contributor.author | 최병준 | - |
| dc.date.accessioned | 2009-11-19T05:02:53Z | - |
| dc.date.available | 2009-11-19T05:02:53Z | - |
| dc.date.copyright | 2009. | - |
| dc.date.issued | 2009 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000035984 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/13633 | - |
| dc.description | Thesis(doctors) --서울대학교 대학원 :재료공학부,2009.2. | eng |
| dc.format.extent | xiii, 171 p. | eng |
| dc.language.iso | en | eng |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | Ge2Sb2Te5 (GST) | eng |
| dc.subject | Ge2Sb2Te5 (GST) | eng |
| dc.subject | 플라스마 강화 화학기상 증착법 (PECVD) | eng |
| dc.subject | Plasma enhanced chemical vapor deposition (PECVD) | eng |
| dc.subject | 플라스마 강화 원자층 증착법 (PEALD) | eng |
| dc.subject | Plasma enhanced atomic layer deposition (PEALD) | eng |
| dc.subject | 선택적 성장 (selective growth) | eng |
| dc.subject | Selective CVD | eng |
| dc.subject | 상변화 메모리 (PRAM) | eng |
| dc.subject | PRAM | eng |
| dc.subject | thermal barrier layer | eng |
| dc.title | Deposition behavior and phase change characteristics of Ge2Sb2Te5 thin films for phase change memory application | eng |
| dc.title.alternative | 상변화메모리 적용을 위한 Ge2Sb2Te5 박막의 증착 거동과 상변화 특성 | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | eng |
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