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Deposition behavior and phase change characteristics of Ge2Sb2Te5 thin films for phase change memory application : 상변화메모리 적용을 위한 Ge2Sb2Te5 박막의 증착 거동과 상변화 특성
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- Authors
- Advisor
- 황철성
- Issue Date
- 2009
- Publisher
- 서울대학교 대학원
- Keywords
- Ge2Sb2Te5 (GST) ; Ge2Sb2Te5 (GST) ; 플라스마 강화 화학기상 증착법 (PECVD) ; Plasma enhanced chemical vapor deposition (PECVD) ; 플라스마 강화 원자층 증착법 (PEALD) ; Plasma enhanced atomic layer deposition (PEALD) ; 선택적 성장 (selective growth) ; Selective CVD ; 상변화 메모리 (PRAM) ; PRAM ; thermal barrier layer
- Description
- Thesis(doctors) --서울대학교 대학원 :재료공학부,2009.2.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000035984
https://hdl.handle.net/10371/13633
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