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Inkjet printed silver gate electrode and organic dielectric materials for bottom-gate pentacene thin-film transistors

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Authors
Kim, Jinwoo; Cho, Junhee; Chung, Seungjun; Kwak, Jeonghun; Lee, Changhee; Kim, Jang-Joo; Hong, Yongtaek
Issue Date
2009-01-15
Publisher
한국물리학회 = The Korean Physical Society
Citation
J. Korean Phys. Soc. 54, 518
Keywords
Printed silverPentaceneOTFTBottom-gatePVP
Abstract
An inkjet-printed silver electrode and a spin-coated cross-linked poly(4-vinylphenol)(PVP)
dielectric layer were used as a gate electrode and a gate insulator for a bottom-gate pentacene
thin- lm transistor (TFT), respectively. The printing and the curing conditions of the printed silver
electrode were optimized and tested on various substrates, such as glass, silicon, silicon dioxide,
polyethersulfone, polyethyleneterephthalate, polyimide and polyarylate, to produce a good sheet
resistance of 0.2 0.4
/ and a good surface roughness of 2.38 nm in RMS value and 20.14 nm in
peak-to-valley (P2V) value, which are very similar to those of conventionally-sputtered indium-tin-
oxide (ITO) or thermally-evaporated silver electrodes. The coated PVP layer of metal/PVP/metal
devices showed a good insulation property of 10.4 nA/cm2 at 0.5 MV/cm. The PVP layer further
reduced the surface roughness of the gate electrode to provide a good interface to the pentance
layer. The pentacene TFT with a structure of glass/printed silver/PVP/pentacene/Au showed a
good saturation region mobility of 0.13 cm2/Vs and a good on/o ratio of larger than 105, which
are similar to the performance of a pentacene TFT with a conventional ITO gate electrode.
ISSN
0374-4884 (Print)
1976-8524 (Online)
Language
English
URI
https://hdl.handle.net/10371/13648
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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