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Photoluminescence and Electroluminescence of Vacuum-Deposited poly(p-phenylene) Thin Film

DC Field Value Language
dc.contributor.authorLee, Changhee-
dc.contributor.authorKang, G. W.-
dc.contributor.authorJeon, J. W.-
dc.contributor.authorSong, W. J.-
dc.contributor.authorKim, S. Y.-
dc.contributor.authorSeoul, C.-
dc.date.accessioned2009-11-23T05:29:29Z-
dc.date.available2009-11-23T05:29:29Z-
dc.date.issued2001-
dc.identifier.citationSynth. Met. 117 (2001) 75en
dc.identifier.issn0379-6779-
dc.identifier.urihttps://hdl.handle.net/10371/13771-
dc.description.abstractWe have studied the photoluminescence (PL) and electroluminescence (EL) properties of vacuum-deposited poly(p-phenylene) (PPP) thin film. The film shows the blue PL and EL emission at about 450 nm with well-resolved vibronic structures. The current–voltage–light (I–V–L) characteristics are systematically studied in the temperature range between 12 and 300 K in light-emitting devices of ITO/PPP/Al, and the devices with a hole transporting layer of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-[1,1′-biphenyl]-4,4′-diamine (TPD), ITO/TPD/PPP/Al. The I–V dependence appears to follow the power law, I∝Vm+1, characteristics of a space-charge-limited current. The EL quantum efficiency increases with the decreasing temperature in ITO/TPD/PPP/Al. From the time delay between the EL emission and the onset of the bias voltage pulse in ITO/PPP/Al, we estimated the hole mobility of 4×10−6 cm2/V s in the vacuum-deposited PPP film.en
dc.language.isoen-
dc.publisherElsevieren
dc.subjectElectroluminescenceen
dc.subjectPhotoluminescenceen
dc.subjectPoly(p-phenylene)en
dc.subjectLight-emitting diodesen
dc.titlePhotoluminescence and Electroluminescence of Vacuum-Deposited poly(p-phenylene) Thin Filmen
dc.typeArticleen
dc.contributor.AlternativeAuthor이창희-
dc.identifier.doi10.1016/S0379-6779(00)00541-5-
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