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Diode-type NAND flash memory cell string having super-steep switching slope based on positive feedback
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Joe, Sung-Min | - |
dc.contributor.author | Kang, Ho-Jung | - |
dc.contributor.author | Choi, Nagyong | - |
dc.contributor.author | Kang, Myounggon | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.creator | 박병국 | - |
dc.date.accessioned | 2018-01-24T06:01:34Z | - |
dc.date.available | 2020-04-05T06:01:34Z | - |
dc.date.created | 2018-08-27 | - |
dc.date.created | 2018-08-27 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, Vol.63 No.4, pp.1533-1538 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://hdl.handle.net/10371/139159 | - |
dc.description.abstract | A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n(+) and p(+) regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tube-type poly-Si channel. To generate the PF in the channel during a read operation, a new read operation scheme is proposed. In this paper, the simulator was calibrated in terms of trap density (D-it) of a poly-Si channel extracted from fabricated 3-D NAND flash memory cells. By utilizing the PF, a NAND flash memory cell in a cell string has a steep subthreshold swing of <1 mV/decade. | - |
dc.language | 영어 | - |
dc.language.iso | en | en |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Diode-type NAND flash memory cell string having super-steep switching slope based on positive feedback | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TED.2016.2533019 | - |
dc.citation.journaltitle | IEEE Transactions on Electron Devices | - |
dc.identifier.wosid | 000373063800019 | - |
dc.identifier.scopusid | 2-s2.0-84979468585 | - |
dc.description.srnd | OAIID:RECH_ACHV_DSTSH_NO:T201709555 | - |
dc.description.srnd | RECH_ACHV_FG:RR00200001 | - |
dc.description.srnd | ADJUST_YN: | - |
dc.description.srnd | EMP_ID:A001741 | - |
dc.description.srnd | CITE_RATE:2.605 | - |
dc.description.srnd | DEPT_NM:전기·정보공학부 | - |
dc.description.srnd | EMAIL:bgpark@snu.ac.kr | - |
dc.description.srnd | SCOPUS_YN:Y | - |
dc.citation.endpage | 1538 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 1533 | - |
dc.citation.volume | 63 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Park, Byung-Gook | - |
dc.contributor.affiliatedAuthor | Lee, Jong-Ho | - |
dc.identifier.srnd | T201709555 | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | CURRENT-VOLTAGE CHARACTERISTICS | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | SUPPRESSION | - |
dc.subject.keywordAuthor | Feedback | - |
dc.subject.keywordAuthor | NAND flash memory | - |
dc.subject.keywordAuthor | steep slope devices | - |
dc.subject.keywordAuthor | thyristors | - |
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