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In[0.53]Ga[0.47] AsInP의 양자 우물 구조를 응용한 적외선 수광 소자 제작
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2003
- Publisher
- 서울대학교 대학원
- Keywords
- MOCVD ; MOCVD ; InGaAs ; InGaAs ; InP ; InP ; 양자 우물 ; Quantum Well ; 적외선 수광 소자 ; Infrared Photodetector ; Photoluminescnce (PL) ; Photoluminescence ; High resolution x-ray diffraction (HRXRD) ; High resolution x-ray diffraction ; 암 전류 ; Dark current ; 광 전류 ; Photocurrent
- Description
- 학위논문(석사)--서울대학교 대학원 :재료공학부,2003.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000057980
https://hdl.handle.net/10371/14742
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