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RF Magnetron Sputtering법에 의해 증착된 CNTSnO2의 H2 감응 특성 및 ITOSnO2의 NO2 감응 특성 : H2 sensing property of CNTSnO2 and NO2 sensing property of ITOSnO2 deposited by RF Magnetron Sputtering

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Authors

양명

Advisor
홍성현
Issue Date
2009
Publisher
서울대학교 대학원
Keywords
반도체식 가스센서semiconductor gas sensorCNTCNTSnO2SnO2ITOITOSnO2SnO2
Description
학위논문(석사) --서울대학교 대학원 :재료공학부, 2009.2.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000036879

https://hdl.handle.net/10371/14783
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